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Figure 2. Neutralization of any S4 charge reduces the effective gating charge. (A) Currents from excised patches containing R255N Ci-Hv1 channels in response to slow voltage ramps (2 mV/s) from −60 to 40 mV and then back to −60 mV. (B) The current during the up and down ramp (data from A). (C–E) Conductance (G) calculated as G = 1/(V − Erev) from measurements as in A and B from excised patches in response to slow voltage ramps (2 mV/s) for R255N (C), R258N (D), and R261N (E) Hv channels in pHi = 5.5 and pHo = 7. The limiting slope fitted as G = G0/ezδVF/RT is shown for each recording. (F) Effective gating charge (zδ) estimated from the limiting slope for charge-neutralized and WT Hv channels (n = 4) from experiments as in A and B. Error bars are SEM. Image published in: Gonzalez C et al. (2013) © 2013 Gonzalez et al. This image is reproduced with permission of the journal and the copyright holder. This is an open-access article distributed under the terms of the Creative Commons Attribution-NonCommercial-ShareAlike license Larger Image Printer Friendly View

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