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Figure 3. Neutralization of S4 charges reduces the effective gating charge in monomeric Hv channels. (A) The current during up and down voltage ramps for monomeric R255N ΔNΔC Ci-Hv1 channels. (B) The calculated conductance (I/(V − Erev)) during up and down voltage ramps for monomeric R258N ΔNΔC Ci-Hv1 channels. The conductance is similar during the up and down ramps, showing that the ramp speed is slow enough to estimate the steady-state conductance. (C) Effective gating charge (zδ) estimated from the limiting slope for charge-neutralized and WT Hv channels in dimeric (red) or monomeric (teal) form (ΔNΔC; see Materials and methods; n = 4). Error bars are SEM. Image published in: Gonzalez C et al. (2013) © 2013 Gonzalez et al. This image is reproduced with permission of the journal and the copyright holder. This is an open-access article distributed under the terms of the Creative Commons Attribution-NonCommercial-ShareAlike license Larger Image Printer Friendly View

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