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Channels (Austin). March 1, 2010; 4 (2): 75-7.

Helical motion of an S4 voltage sensor revealed by gating pore currents.

Catterall WA , Yarov-Yarovoy V .

The mechanism by which the voltage sensors of voltage-gated ion channels move gating charge during the activation process is a subject of active debate. In this issue of Channels, Gamal El-Din et al. probe the movements of the S4 voltage sensor of Shaker K(+) channels through clever use of omega gating pore currents generated by paired gating-charge mutations. Their results provide strong support for a sliding helix or helical screw mechanism of gating charge movement.

PubMed ID: 20139706
Article link: Channels (Austin).

Genes referenced: tbx2

External Resources:

Gamal El-Din, 2010, Pubmed, Xenbase

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