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J Gen Physiol
2013 Feb 01;1412:217-28. doi: 10.1085/jgp.201210794.
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Interaction between residues in the Mg2+-binding site regulates BK channel activation.
Yang J
,
Yang H
,
Sun X
,
Delaloye K
,
Yang X
,
Moller A
,
Shi J
,
Cui J
.
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As a unique member of the voltage-gated potassium channel family, a large conductance, voltage- and Ca(2+)-activated K(+) (BK) channel has a large cytosolic domain that serves as the Ca(2+) sensor, in addition to a membrane-spanning domain that contains the voltage-sensing (VSD) and pore-gate domains. The conformational changes of the cytosolic domain induced by Ca(2+) binding and the conformational changes of the VSD induced by membrane voltage changes trigger the opening of the pore-gate domain. Although some structural information of these individual functional domains is available, how the interactions among these domains, especially the noncovalent interactions, control the dynamic gating process of BK channels is still not clear. Previous studies discovered that intracellular Mg(2+) binds to an interdomain binding site consisting of D99 and N172 from the membrane-spanning domain and E374 and E399 from the cytosolic domain. The bound Mg(2+) at this narrow interdomain interface activates the BK channel through an electrostatic interaction with a positively charged residue in the VSD. In this study, we investigated the potential interdomain interactions between the Mg(2+)-coordination residues and their effects on channel gating. By introducing different charges to these residues, we discovered a native interdomain interaction between D99 and E374 that can affect BK channel activation. To understand the underlying mechanism of the interdomain interactions between the Mg(2+)-coordination residues, we introduced artificial electrostatic interactions between residues 172 and 399 from two different domains. We found that the interdomain interactions between these two positions not only alter the local conformations near the Mg(2+)-binding site but also change distant conformations including the pore-gate domain, thereby affecting the voltage- and Ca(2+)-dependent activation of the BK channel. These results illustrate the importance of interdomain interactions to the allosteric gating mechanisms of BK channels.
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???displayArticle.pmcLink???PMC3557308 ???displayArticle.link???J Gen Physiol ???displayArticle.grants???[+]
Figure 1. D99 and E374 interact with each other at the domain interface of BK channels. (A) Cartoon showing the molecular mechanism of Mg2+ activation. S0âS6 are membrane-spanning segments. Mg2+ is coordinated by four residues including D99 and N172 from the membrane-spanning domain and E374 and E399 from the cytosolic domain. Bound Mg2+ interacts with R213 of the membrane-spanning domain to activate channel. Located in the vicinity of the Mg2+-binding site is residue Q397, which may interact with R213 when charged. (B) Cartoon showing the spontaneous formation of a disulfide bond between C99 and C397 located in the membrane-spanning and cytosolic domains, respectively. (C) Macroscopic current traces of inside-out patches expressing WT BK channels and D99R, E374R, D99R/E374R, and E399R mutant channels. Currents were elicited by voltages ranging from 0 to 200 mV, with 50-mV increments. The voltage was â50 mV before and â80 mV after the pulses. [Ca2+]i: 0 µM. Bars, 1 nA. (D) G-V relations of WT, D99R, E374R, D99R/E374R, and E399R. [Ca2+]i: 0 µM. Solid lines are fittings to the Boltzmann equation. The fitting parameters are: WT (n = 4): V1/2 = 187 ± 4 and z = 1.29 ± 0.12; D99R (n = 14): V1/2 = 170 ± 3 and z = 1.31 ± 0.03; E374R (n = 6): V1/2 = 136 ± 2 and z = 1.29 ± 0.04; D99R/E374R (n = 5): V1/2 = 195 ± 2 and z = 1.21 ± 0.05; E399R (n = 3): V1/2 = 183 ± 5 and z = 1.34 ± 0.10. (E) V1/2 of the G-V relations. The fitting parameters for D99A and D99A/E374R are: D99A (n = 6): V1/2 = 198 ± 5 and z = 1.20 ± 0.05; D99A/E374R (n = 7): V1/2 = 186 ± 2 and z = 1.24 ± 0.06.
Figure 2. Electrostatic repulsion between residues 172 and 399 inhibits channel activation. (A) Macroscopic current traces of inside-out patches expressing N172C/E399C before and after treatment of negative MTSES(â) (ES) or positive MTSET(+) (ET) reagent. Currents were elicited by voltages of â50, 0, 50, and 100 mV. The voltage was â50 mV before and â120 mV (top) or â80 mV (middle and bottom) after the pulses. [Ca2+]i: 200 µM. (B) G-V relation of N172C/E399C shifts after treatment of ES or ET reagent. Open symbols, [Ca2+]i: 0 µM; closed symbols, [Ca2+]i: 200 µM. Solid lines are fittings to the Boltzmann equation. The fitting parameters are: N172C/E399C untreated, 0 [Ca2+]i (n = 3): V1/2 = 197 ± 5 and z = 1.19 ± 0.22; 200 µM [Ca2+]i (n = 7): V1/2 = 2 ± 7 and z = 1.20 ± 0.09; after MTSES treatment, 0 [Ca2+]i (n = 3): V1/2 = 250 ± 25 and z = 0.86 ± 0.60; 200 µM [Ca2+]i (n = 7): V1/2 = 47 ± 6 and z = 1.13 ± 0.27; after MESET treatment, 0 [Ca2+]i (n = 3): V1/2 = 271 ± 10 and z = 1.19 ± 0.44; 200 µM [Ca2+]i (n = 4): V1/2 = 61 ± 1 and z = 1.13 ± 0.03. (C) G-V relation of the control C430A after treatment of ES or ET reagent. Open symbols: [Ca2+]i: 0 µM; closed symbols: [Ca2+]i: 200 µM. Solid lines are fittings to the Boltzmann equation. The fitting parameters are: C430A untreated, 0 [Ca2+]i (n = 7): V1/2 = 198 ± 2 and z = 1.13 ± 0.03; 200 µM [Ca2+]i (n = 6): V1/2 = â19 ± 4 and z = 1.48 ± 0.08; after MTSES treatment, 0 [Ca2+]i (n = 6): V1/2 = 204 ± 6 and z = 1.11 ± 0.04; 200 µM [Ca2+]i (n = 3): V1/2 = â7 ± 4 and z = 1.26 ± 0.15; after MESET treatment, 0 [Ca2+]i (n = 3): V1/2 = 195 ± 2 and z = 1.09 ± 0.06; 200 µM [Ca2+]i (n = 3): V1/2 = â14 ± 6 and z = 1.54 ± 0.49. (D) G-V relations of N172C/E399C after treatment of neutral MTSACE (ACE) and/or positive ET. [Ca2+]i: 0 µM. Solid lines are fittings to the Boltzmann equation. The fitting parameters are: N172C/E399C untreated (n = 3): V1/2 = 197 ± 5 and z = 1.19 ± 0.22; after MTSACE treatment (n = 4): V1/2 = 199 ± 5 and z = 1.11 ± 0.21; after MTSET treatment (n = 3): V1/2 = 271 ± 10 and z = 1.19 ± 0.44; after MTSACE and MTSET treatments (n = 3): V1/2 = 207 ± 4 and z = 1.19 ± 0.22. N172C/E399C mutation is on the background of C430A to eliminate the effects of MTS reagents on the native C430 (Zhang and Horrigan, 2005).
Figure 3. Electrostatic interactions between residues 172 and 399 depend on ionic strength. (AâD) G-V relations in control solution (200 µM [Ca2+]i solution) or in control solution with an additional 1 M NaCl for the control (A), N172C/E399C (B), N172C/E399C after MTSES (C), or N172C/E399C after MTSET (D). All G-V curves are fitted to the Boltzmann equation (lines). The fitting parameters are: the control channel under control solution (n = 6): V1/2 = â19 ± 4 and z = 1.48 ± 0.08; under an additional 1 M NaCl (n = 3): V1/2 = â24 ± 3 and z = 1.36 ± 0.08; N172C/E399C under control solution (n = 7): V1/2 = 2 ± 7 and z = 1.20 ± 0.09; under an additional 1 M NaCl (n = 8): V1/2 = 3 ± 7 and z = 1.32 ± 0.07; N172C/E399C after MTSES under control solution (n = 2): V1/2 = 43 ± 1 and z = 1.32 ± 0.11; under an additional 1 M NaCl (n = 3): V1/2 = 17 ± 2 and z = 1.29 ± 0.05; N172C/E399C after MTSET under control solution (n = 4): V1/2 = 60 ± 1 and z = 1.13 ± 0.03; under an additional 1 M NaCl (n = 4): V1/2 = 39 ± 2 and z = 1.14 ± 0.03. The control and N172C/E399C mutation are on the background of C430A.
Figure 4. Effects of charge type at residues 172 and 399 on channel activation. G-V relation is shifted by charge type at residue 172 (B) but not by residue 399 (A). [Ca2+]i: 0. Solid lines are fittings to the Boltzmann equation. The fitting parameters are: N172Q (n = 4): V1/2 = 181 ± 5 and z = 1.11 ± 0.20; N172Q/E399N (n = 5): V1/2 = 186 ± 4 and z = 1.15 ± 0.18; N172Q/E399R (n = 5): V1/2 = 184 ± 4 and z = 1.04 ± 0.17; E399C/N172D (n = 8): V1/2 = 188 ± 4 and z = 1.23 ± 0.23; E399C/N172R (n = 5): V1/2 = 132 ± 5 and z = 1.30 ± 0.29; E399C (n = 6): V1/2 = 201 ± 4 and z = 1.23 ± 0.22. (C) V1/2 of a variety of N172 and E399 mutations with or without chemical modifications listed in Table 1 versus charge type at 172 (left) or 399 (right). Solid lines are fittings to linear regression. The slope ± fitting SD of linear regression is â16.1 ± 7.5 for the charge type at 172 and â2.6 ± 7.4 for the charge type at 399. (D) V1/2âs of mutations in Table 1 are averaged based on the interaction type between 172 and 399.
Figure 5. The 172â399 electrostatic interaction alters voltage- and Ca2+-dependent activation. (A) V1/2 at 0 [Ca2+]i indicating changes in voltage-dependent activation. The mutations are grouped such that the negative residue E399 (open bars) is mutated to neutral (gray bars) or positive (closed bars) residues on the backgrounds where residue 172 contains a negative, positive, or no charge. (B) ÎV1/2 = V1/2 at 0 [Ca2+]i â V1/2 at 112 µM [Ca2+]i, indicating Ca2+ activation by saturating [Ca2+]i. Mutations are the same as in A. Asterisks in A and B indicate significant difference between the labeled pairs as identified in multiple comparisons (P < 0.017 as adjusted by the Bonferroni correction). The group of N172R mutations in A and B are made on the background of C430A. There is no significant difference in the number of equivalent gating charges among all the G-V relations. (CâE) G-V relation for N172R (C), N172R/E399C (D), and N172R/E399R (E) in varying [Ca2+]i. Solid lines are fittings to the Boltzmann equation. The fitting parameters of the mutations in AâE are: N172R 0 Ca (n = 4): V1/2 = 139 ± 1 and z = 1.24 ± 0.05; 1.0 Ca (n = 4): V1/2 = 91 ± 2 and z = 1.45 ± 0.09; 4.6 Ca (n = 4): V1/2 = 48 ± 3 and z = 1.31 ± 0.03; 9.3 Ca (n = 4): V1/2 = 23 ± 4 and z = 1.28 ± 0.06; 112 Ca (n = 3): V1/2 = â12 ± 2 and z = 1.37 ± 0.02; N172R/E399C 0 Ca (n = 6): V1/2 = 138 ± 3 and z = 1.33 ± 0.09; 1.0 Ca (n = 5): V1/2 = 95 ± 3 and z = 1.31 ± 0.07; 4.6 Ca (n = 4): V1/2 = 36 ± 2 and z = 1.41 ± 0.03; 9.3 Ca (n = 2): V1/2 = â10 ± 1 and z = 1.48 ± 0.02; 112 Ca (n = 3): V1/2 = â27 ± 6 and z = 1.48 ± 0.04; N172R/E399R 0 Ca (n = 4): V1/2 = 172 ± 4 and z = 1.29 ± 0.05; 1.0 Ca (n = 4): V1/2 = 118 ± 8 and z = 1.30 ± 0.14; 4.6 Ca (n = 4): V1/2 = 41 ± 4 and z = 1.25 ± 0.07; 9.3 Ca (n = 4): V1/2 = 14 ± 2 and z = 1.30 ± 0.09; 112 Ca (n = 3): V1/2 = â4 ± 6 and z = 1.34 ± 0.05; N172D 0 Ca (n = 4): V1/2 = 204 ± 4 and z = 1.18 ± 0.20; 112 Ca (n = 3): V1/2 = 20 ± 5 and z = 0.96 ± 0.15; N172D/E399N 0 Ca (n = 10): V1/2 = 200 ± 4 and z = 1.26 ± 0.07; 112 Ca (n = 2): V1/2 = 32 ± 10 and z = 1.34 ± 0.04; N172D/E399R 0 Ca (n = 4): V1/2 = 153 ± 3 and z = 1.28 ± 0.07; 112 Ca (n = 4): V1/2 = 16 ± 2 and z = 1.02 ± 0.02; WT 0 Ca (n = 7): V1/2 = 164 ± 2 and z = 1.18 ± 0.05; 112 Ca (n = 5): V1/2 = â7 ± 2 and z = 1.55 ± 0.07; E399N 0 Ca (n = 9): V1/2 = 170 ± 4 and z = 1.18 ± 0.03; 112 Ca (n = 5): V1/2 = â1 ± 3 and z = 1.59 ± 0.07; E399R 0 Ca (n = 7): V1/2 = 172 ± 3 and z = 1.30 ± 0.09; 112 Ca (n = 7): V1/2 = â7 ± 6 and z = 1.52 ± 0.05; N172Q 0 Ca (n = 4): V1/2 = 181 ± 2 and z = 1.11 ± 0.09; 112 Ca (n = 5): V1/2 = â22 ± 2 and z = 1.42 ± 0.05; N172Q/E399N 0 Ca (n = 5): V1/2 = 186 ± 3 and z = 1.11 ± 0.07; 112 Ca (n = 4): V1/2 = â14 ± 4 and z = 1.43 ± 0.05; N172Q/E399R 0 Ca (n = 5): V1/2 = 184 ± 3 and z = 1.10 ± 0.02; 112 Ca (n = 4): V1/2 = â13 ± 3 and z = 1.46 ± 0.07. All these mutations are on the C430A background. (F) V1/2 (open symbols) and z (closed symbols) versus [Ca2+]i for the G-V relations in CâE.
Figure 6. The 172â399 electrostatic interaction disrupts the formation of the interdomain disulfide bond. (A) G-V relations before (open circles) and after (closed symbols) treatment of MTSET (ET), MTSES (ES), or DTT when E399 is mutated to Asn (middle) or Arg (right) on the background of D99C/Q397C/N172R (left). âDTT, ETâ in the middle panel represents the treatment of DTT followed by MTSET. [Ca2+]i: 0. Solid lines are fittings to the Boltzmann equation. The fitting parameters are: D99C/Q397C/N172R untreated (n = 8): V1/2 = 153 ± 3 and z = 1.3 ± 0.02; after ET (n = 5): V1/2 = 140 ± 2 and z = 1.37 ± 0.04; after DTT (n = 6): V1/2 = 147 ± 3 and z = 1.28 ± 0.06; D99C/Q397C/N172R/E399N untreated (n = 6): V1/2 = 183 ± 3 and z = 1.14 ± 0.07; after ET (n = 8): V1/2 = 187 ± 5 and z = 1.07 ± 0.05; after DTT (n = 11): V1/2 = 161 ± 3 and z = 1.26 ± 0.04; after DTT and ET (n = 3): V1/2 = 218 ± 5 and z = 0.88 ± 0.06; D99C/Q397C/N172R/E399R untreated (n = 9): V1/2 = 202 ± 3 and z = 1.20 ± 0.03; after ES (n = 7): V1/2 = 171 ± 3 and z = 1.33 ± 0.07; after DTT (n = 8): V1/2 = 203 ± 4 and z = 1.12 ± 0.05. (B) V1/2 of the G-V relations shown in A for the corresponding mutations and chemical modifications. Cartoons on the top show the type of the 172â399 electrostatic interactions (arrows) as a result of residue 399 charges and its consequence on the formation of the disulfide bond between D99C and D397C (line) based on the results (see Results). Asterisks indicate significant difference between labeled pairs as identified in multiple comparisons (P < 0.017 for the left and right panels and P < 0.0083 for the middle panel as adjusted by the Bonferroni correction). All the mutations are on the background of C430A.
Figure 7. The 172â399 electrostatic interaction alters the intrinsic open probability of the activation gate. (A) Current traces of unitary openings (thin spikes) elicited by indicated voltages from inside-out patches expressing hundreds of channels. [Ca2+]i = 0. (B) PO-V relation for WT and E399R (left), N172D, N172D/E399N, and N172D/E399R (right). [Ca2+]i = 0. Solid lines are fittings to the HCA model (Eq. 2) (n ⥠5). Dashed line in the right panel is the HCA fitting for WT. (C) Enlarged PO-V relations in the right panel of B at the negative voltage range. (D) L0 of the HCA model. Error bars represent 95% confidence intervals. The HCA model has fixed parameters (zL = 0.1 and zJ = 0.57), whereas L0, Vhc, and Vho are optimized for the best fitting. Vhc and Vho values (mV) are as follows (parameter ± 95% confidence interval): WT: Vhc = 172 ± 8 and Vho = â18 ± 3; E399R: Vhc = 164 ± 9 and Vho = â15 ± 4; N172D: Vhc = 188 ± 10 and Vho = â11 ± 4; N172D/E399N: Vhc = 173 ± 9 and Vho = â13 ± 4; N172D/E399R: Vhc = 168 ± 10 and Vho = â54 ± 3.
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