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Figure 6. Current–voltage relations of Cx32*Cx43E1 conductive hemichannels obtained by the application of ±100-mV ramps in a cell-attached patch configuration. Arrows indicate the direction of the time axis. In A and C, voltage was ramped from −100 to +100 mV, in B and D from +100 to −100 mV. In the 3-s-duration voltage ramps shown in A and B, current rectifies inwardly and the channel closes to subconductance levels only at hyperpolarizing potentials. The overall form of the I-V relation elicited by the positive going ramp shown in A is similar to that elicited by the negative going ramp shown in B. (C and D) In 8-s voltage ramps, an additional gating transition (*) is observed at depolarizing potentials (see Fig. 5 C). The baseline currents were adjusted to zero in these records. The records were digitally filtered at 200 Hz for presentation. Image published in: Oh S et al. (2000) © 2000 The Rockefeller University Press. Creative Commons Attribution-NonCommercial-ShareAlike license Larger Image Printer Friendly View

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